Improved SrTiO3 thin films using oxygen relaxation technique
نویسندگان
چکیده
منابع مشابه
Ferroelectricity in strain-free SrTiO3 thin films.
Biaxial strain is known to induce ferroelectricity in thin films of nominally nonferroelectric materials such as SrTiO3. By a direct comparison of the strained and strain-free SrTiO3 films using dielectric, ferroelectric, Raman, nonlinear optical and nanoscale piezoelectric property measurements, we conclude that all SrTiO3 films and bulk crystals are relaxor ferroelectrics, and the role of str...
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The dielectric and conduction behavior of SrTiO3 thin films deposited on a SrTiO3 single-crystal substrate is studied. Without dc bias, an obvious dielectric ‘‘defect mode’’ in the dielectric loss is observed in the temperature range of ;100–200 K; however, no noticeable corresponding dielectric constant peak is observed. By applying a high dc bias ~>40 kV/cm!, a dielectric constant peak with f...
متن کاملInducing exchange bias in La0.67Sr0.33MnO3−δ/SrTiO3 thin films by strain and oxygen deficiency
We present an exchange bias (EB) effect of variable size in La0.67Sr0.33MnO3−δ single and La0.67Sr0.33MnO3−δ/SrTiO3 (LSMO/STO) bilayers grown on STO substrates. Samples have been prepared by pulsed laser deposition (PLD) and high-pressure sputter deposition (HSD) in oxygen atmosphere at different oxygen pressures. Increased out-of-plane lattice parameters of the LSMO layers and reduced Curie te...
متن کاملتأثیر فشار اکسیژن بر ساختار، هدایت الکتریکی و نفوذپذیری اکسیژن لایه های نازک Ba0/5Sr0/5Co0/8Fe0/2O3-δ ساخته شده با لایه نشانی لیزر پالسی
In this paper, Ba0.5Sr0.5Co0.8Fe0.2O3-δ (BSCF) thin films were deposited on single crystal SrTiO3 (STO) (100) by pulsed laser deposition (PLD) technique at different pressures of oxygen. Crystal structure of bulk and thin film samples was studied by x-ray diffraction (XRD). The XRD results indicate that both bulk and thin film samples have cubic structures. AFM micrographs showed an increase i...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2005
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2136432